Nanoscale MOS Transistors

Nanoscale MOS Transistors by Pierpaolo Palestri

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: - Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials - All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework - Predictive capabilities of device models, discussed with systematic comparisons to experimental results

'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETsWith only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University
'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.' Thomas Skotnicki, STMicroelectronics
'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow

David Esseni is an Associate Professor of Electronics at the University of Udine, Italy. Pierpaolo Palestri is an Associate Professor of Electronics at the University of Udine, Italy. Luca Selmi is a Professor of Electronics at the University of Udine, Italy.

SKU	Nicht verfügbar
ISBN 13	9780521516846
ISBN 10	0521516846
Titel	Nanoscale MOS Transistors
Autor	Pierpaolo Palestri
Buchzustand	Nicht verfügbar
Bindungsart	Hardback
Verlag	Cambridge University Press
Erscheinungsjahr	2011-01-20
Seitenanzahl	488
Hinweis auf dem Einband	Die Abbildung des Buches dient nur Illustrationszwecken, die tatsächliche Bindung, das Cover und die Auflage können sich davon unterscheiden.
Hinweis	Nicht verfügbar